This dissertation describes the development of an energy efficient 3D multi-band I/O interface to meet the demand for high computation and improve battery life for future mobile memory interface exploiting 3D integration. The multi-band I/O (MBI) interface utilizes 3D integration, amplitude shift keying modulation/demodulation scheme for two radio frequency (RF) band transceivers, and CMOS driver with resistive feedback for the baseband (BB) transceiver. It enables transceiving three bands simultaneously that results in significant enhancements in energy efficiency and aggregate bandwidth. The 3D MBI system was implemented in 130nm CMOS process technology. It obtains a high aggregate data rate of 14.4Gb/s and an energy efficiency of 2.6pJ/b compared with prior works.
Electrical and Computer Engineering
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Alzahmi, Ahmed, "High-Performance and Energy Efficient Multi-Band I/O Interface for 3D Stacked Memory" (2018). Electrical Engineering Theses and Dissertations. 14.