Alternative Title

Adjoint integrated circuit simulation and time domain sensitivity analysis

Abstract

In this paper, we revisit time-domain adjoint sensitivity with a circuit theoretic approach and an efficient solution is clearly stated in terms of device level. Key is the linearization of the energy storage elements (e.g., capacitance and inductance) and nonlinear memoryless elements (e.g., MOS, BJT DC characteristics) at each time step. Due to the finite precision of computation, numerical errors that accumulate across timesteps can arise in nonlinear elements.

Degree Date

Fall 2022

Document Type

Dissertation

Degree Name

Ph.D.

Department

Electrical and Computer Engineering

Advisor

Ron Rohrer

Number of Pages

92

Format

.docx

Creative Commons License

Creative Commons Attribution-Noncommercial 4.0 License
This work is licensed under a Creative Commons Attribution-Noncommercial 4.0 License

Share

COinS